Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To enable to form an N type region and a P type region separately from an intrinsic active region at a lower cost by a method wherein an oxidation-resistance coated film is selectively formed at an aperture part formed in the substrate, the substrate is oxidized using the coated fiolm as a mask, an active region, whose bottom surface and sides are surrounded with an oxide film, is formed and impurity diffusion is performed on the active region. CONSTITUTION:A thermal oxide film 20 and an oxidation-resistance coated film, for example, silicon nitriding film 21, are formed on an intrinsic silicon substrate 19 and aperture part 22 is formed at a part where is to become an isolated region. Then, a thermal oxidation is performed using the silicon nitriding film 21 as a mask and an oxide film 25 is formed. After that, silicon nitriding films 24-26 are formed on the whole surface by a depression CVD method. After then, a strong anisotropic etching is performed, a silicon nitriding film is selectively formed, a high-pressure oxidation is performed and an oxide film is formed on the bottom surface and the sides of an intrinsic active region 30 isolated as the result of the aforementioned procedures. Then, N type impurities are diffused by a wet etching excluding an active region A and an N type active region 30A is formed, while P type impurities are diffused excluding an active region B and the active region B is converted into a P type active region 30B.

Inventors

• 👤 Mitsuko Akiyama
• 👤 秋山　充子
• 👤 Kenji Kawakita
• 👤 川北　憲司
• 👤 Hiroyuki Sakai
• 👤 坂井　弘之
• 👤 Toyoki Takemoto
• 👤 竹本　豊樹

Bibliographic Details