Plasma chemical vapor deposition device

Abstract

Abstract PURPOSE:To contrive improvement in film quality of a grown film by a method wherein an insulator on which a sample will be placed is provided between electrodes, the entire device is formed into a vertical shape by fixing the electrodes using an end cap, and the sample to be processed is taken in and out rom the lower side. CONSTITUTION:The electrodes 24 and 25 opposing with each other are fixed to an end cap 31, and they are integrally constituted in vertical form by connecting them to a high frequency power source 26 located outside. A semiconductor wafer 29, having the film-coating process performed surface facing upward, is placed on the substrate holder 30 of an insulator, said semiconductor wafer 29 is placed in a reaction tube 22 together with the electrodes 24 and 25, and the wafer is airtightly sealed by closing the end cap 31. The temperature of a substrate is maintained constantly by heating using a heater 23, and a desired thin film is formed by decompressing and evacuating the reaction tube 22 and by introducing reaction gas. As a result, the poor contact at the electrode junction part can be removed, and the generation of contaminated fine powder can also be prevented. Also, as the electrodes and the sample do not come in contact with the wall of the reaction tube when they are taken in and out, an excellent quality of film can be obtained.

Inventors

• 👤 Shuichi Ohashi
• 👤 修一 大橋

Bibliographic Details