Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To enable to accomplish the suppression of silicon deposition in a contact electrode and the stabilized constitution of aluminum alloy wiring by a method wherein the wiring layer to be used for the formation of contact elec- trode on a substrate is formed by depositing an aluminum-silicon alloy, and aluminum is deposited on said alloy film. CONSTITUTION:A contact window is provided on the insulating layer 22 located on a substrate 21, and the first wiring layer 23 consisting of a silicon-rich aluminum-silicon alloy is formed covering said contact window. In this case, the mixing rate ratio and the film thickness of aluminum and silicon are prescribed. The second wiring layer 24 of pure aluminum is formed on the wiring layer 23 by performing a continuous sputtering. As a result, the epitaxial growth wherein silicon is precipitated is retarted, the reaction in the wiring layer 23 makes progress, and the degree of influence affected into the second wiring layer is small. Then, a stabilized electrode wiring layer can be obtained by forming contact electrodes 25 and 26 by peforming a patterning on the wiring layers 23 and 24.

Inventors

• 👤 Hajime Kamioka
• 👤 上岡　元
• 👤 Kazunari Shirai
• 👤 白井　一成
• 👤 Shigeo Kashiwagi
• 👤 柏木　茂雄

Bibliographic Details