Growing of gallium nitride single crystal

Abstract

Abstract PURPOSE:To produce a uniform and thin GaN single crystal layer having excellent blue-light emitting characteristics, etc., at a low cost, by using an organic gallium compound, ammonia and N2 carrier gas, and carrying out the vapor- phase deposition of a GaN single crystal on a heated single crystal substrate. CONSTITUTION:A single crystal sapphire substrate 34 is placed on the susceptor 33 in the cylindrical quartz reaction tube 31. N2 gas is introduced as a carrier gas into the reaction tube through the inlet 35 attached to the top of the reaction tube 31, and at the same time, the single crystal substrate 34 is heated with the high-frequency coil 32. Thereafter, an organic gallium compound (e.g. trimethyl gallium) is introduced through the inlet 36 together with N2 carrier gas, and at the same time, NH3 is introduced through the inlet 37 to effect the growth of an n type GaN single crystal on the sapphire single crystal 34. Then, diethyl zinc is introduced together with N2 carrier gas through the inlet 38 to effect the growth of the Zn-doped i-type GaN single crystal on the n type GaN single crystal layer.

Inventors

• 👤 Masafumi Hashimoto
• 👤 雅文 橋本
• 👤 Isamu Akasaki
• 👤 勇 赤崎

Bibliographic Details