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JPS6065545A Expired / Lapsed JP ⏱️ 0.0 years remaining

Manufacture of semiconductor device and the same device

Assignee: Hitachi Microcomputer System Ltd
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Filing: 1983-09-21
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Granted: —
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Expires: 2003-09-21
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Abstract

Abstract PURPOSE:To prevent a moisture from immersing to a fuse or an electrode pad lower layer by testing part of the fuse and the electrode pad in the open state, repairing a defect, and then covering a necessary portion. CONSTITUTION:A passivation film 22 is covered on the overall surface of a DRAM, the film 22 on a fuse 4 and an electrode pad 20 is etched to form holes 21, 24. A probe 25 is contacted with the exhibited portion 20A of the pad 20 to flow a current in an internal circuit, thereby testing the characteristics. An overcurrent is flowed through the selected fuse 4 to fusion-break the narrow portion 4a in the central width on the basis of the test to countermeasure the defect. After the test is completed, a passivation film 27 is covered on the overall surface. Then, the films 27, 22 are etched to newly form a hole 28 to expose the pad 20B of the position different from a crack 28 occurred in the test. The completed DRAM is subjected to wiring-connection to electrode pads having no crack.

Inventors

  • 👤 Shinji Udo
  • 👤 有働 信治
  • 👤 Masanori Hiroki
  • 👤 尋木 正紀

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-05 09:01
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; G; G01; G01R; G01R31/00; G01R31/26; G01R31/2607; G01R31/2621; H10W72/00; H10W72/30; H10W72/071; H10W72/073; H10W72/07331; H10W72/07336; H10W72/851; H10W72/874; H10W72/884; H10W74/00; H10W90/00; H10W90/701; H10W90/731; H10W90/736; H10W90/751; H10W90/756; Y; Y10; Y10S; Y10S148/00; Y10S148/055

Claims Analysis

Total Claims: 0
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References Cited (Backward Citations)

JPS56146268A Cited

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