Radiation resistant semiconductor integrated circuit device

Abstract

Abstract PURPOSE:To improve the radiation resistance performance by compensating a decrease in the current amplification due to radiation absorption to the prescribed degree by the regulation of the junction temperature of a semiconductor device. CONSTITUTION:A decrease in a current amplification foctor occurred by the fact that radiation dosage is absorbed to a semiconductor integrated circuit is detected by a detector, and expressed as vC/vB of the voltage drops of external resistors 23, 24, i.e., a signal voltage 30. If the voltage 30 decreases to a threshold voltage 31 or lower, a gate 29 is opened by an output signal of a comparator 28, and a supply current of a power source 36 is supplied to a Peltier element 10. The element 10 supplies thermal energy to a bipolar transistor for the integrated circuit, and the current amplification factor decreased due to the increase in the junction temperature Tj is increased and recovered. When it is recovered to the original value of the current amplification factor, thermal energy supply due to the element 10 is stopped, and the rise of the temperature Tj is stopped. The junction temperature Tj of the transistor can be controlled from this repeated regulation, thereby compensating the decrease in the current amplification factor due to the radiation absorption.

Inventors

• 👤 Senji Yoshioka
• 👤 吉岡　仙次
• 👤 Fumio Tomizawa
• 👤 富澤　文雄
• 👤 Nobuyoshi Iwatsuka
• 👤 岩塚　信好

Bibliographic Details