Noncrystal substrate with single crystal silicon thin film and its manufacture

Abstract

Abstract PURPOSE:To enable application to improvement of performance of a switching element for picture element control, the transmission type and the larger picture of a display or to a three-dimensional circuit element related to a display of liquid crystal, EL, fluorescence, etc. by having a single crystal silicon thin film of more than a specific value width. CONSTITUTION:A noncrystal substrate which has a single crystal silicon thin film of more than 20mum width is used. Minute silicon nuclear crystal particles are also formed on a noncrystal film 2 such as silicon oxide or silicon nitride or on a noncrystal solid such as glass which is formed on a glass or other solid 1 and around the particles, a polycrystalline silicon thin film 3 or a noncrystal silicon thin film 7 consisting of more minute particles is formed and the film absorb minute silicon particles from around due to thermal annealing causing crystal growth of nuclear crystal particles to a monocrystal 4 of large area whereby the noncrystal substrate with the single crystal silicon thin film is manufactured.

Inventors

• 👤 Masaki Inada
• 👤 稲田　雅紀

Bibliographic Details