Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To improve electro-migration-resistant characteristics and the reliability of a wiring by completely coating the exposed surface of a wiring pattern consisting of an Al film, an Al alloy film, etc. with a high melting-point metallic thin-film. CONSTITUTION:The ions of an impurity such as arsenic are implanted to a predetermined region in a p type silicon substrate 21 and thermally treated to form an n type diffusion layer 22, and the whole surface is coated with a film such as an SiO2 film or a PSG film as an insulating film 23. A contact hole 24 is bored at the prescribed position of the insulating film 23, Al films 25 are formed, and the Al films 25 are processed to predetermined wiring patterns. Tungsten films 26 are applied only on the exposed surfaces of the Al wiring patterns, and first wiring layers are shaped. An SiO2 film 27 is formed on the first wiring layers as an inter-layer insulating film 27, a through-hole 28 is bored, and second-layer Al wiring patterns are formed. A vapor phase growth film by the fluoride of molybdenum, niobium, tantalum or titanium may be used besides the tungsten film as a high melting-point metallic film.

Inventors

• 👤 Takahiko Moriya
• 👤 守屋　孝彦
• 👤 Saburo Nakada
• 👤 中田　三郎

Bibliographic Details