Insulated gate type field effect semiconductor device

Abstract

Abstract PURPOSE:To prevent the malfunction of an integrated circuit due to the electrical noise from outside by a method wherein a metal or a conductor layer is further provided on or in an insulation film provided on a metal or a conductor layer of the surface of an MOS transistor chip. CONSTITUTION:For the metal or the conductor layer 47 provided on the insulation film 46 of an N-channel MOSIC, a metal of Al, Au, Pt, etc. or the alloy of those metals with silicide, etc., or a conductor such as poly Si (containing impurity dopant) is used. It is sufficient that its film thickness is in a range for conductor formation. Said metal or conductor layer is electrically connected to a chip substrate 40 or a ground potential, thereby the IC is electrically sealed even in the adhesion of static electricity or from the electrical noise from outside.

Inventors

• 👤 Junji Sugawara
• 👤 菅原　淳二

Bibliographic Details