Semiconductor device

Abstract

Abstract PURPOSE:To enable to bond a semiconductor chip by a soft brazing material on a heat sink substrate by using a composite alloy metal plate which selects thermal expansion coefficient as an intermediate plate. CONSTITUTION:In a semiconductor device in which a semiconductor chip 6 is bonded through an intermediate metal plate 7 on a heat sink substrate 9, a metal composite plate such as a clad plate in which oxygenless coppers having the same thickness are bonded by a cold rolling method at both sides of an iron- 36% nickel alloy having small thermal expansion coefficient is used as the plate 7. Then, the coefficient is decided to be the prescribed value, i.e., larger than the value produced by adding 1/4 of the difference between the thermal expansion coefficient of the substrate and that of the chip to the thermal expansion coefficient of the chip and smaller than the value produced by adding 3/5 of the difference between the thermal expansion coefficient of the substrate and that of the chip to that of the chip. Thus, since the chip 6, the plate 7 and the substrate 9 can be bonded thereamong with a soft brazing material 8, the reliability can be improved as compared with the conventional one that the substrate 1 and the plate 7 are bonded therebetween with the brazing material.

Inventors

• 👤 Komei Yatsuno
• 👤 八野　耕明
• 👤 Yasutoshi Kurihara
• 👤 保敏 栗原
• 👤 Michio Ogami
• 👤 大上　三千男

Bibliographic Details