Field effect transistor

Abstract

Abstract PURPOSE:To enable stable action and super-high speed action at low temperature, and thus enable to form a photo-electron integrated circuit by easy formation on the same substrate as that of a semiconductor laser device, by utilizing the space charge restriction current by the combination with a double hetero-junction structure. CONSTITUTION:The lower semiconductor layer 3 of semi-insulation property having a lattice constant equal to that of the substrate crystal and a large forbidden band energy width is provided on the semi-insulation substrate crystal 1 of GaAs, etc., and a semiconductor crystal layer 2 having a smaller forbidden band energy width is provided thereon as the channel. The upper semiconductor layer 4 of semi-insulation property having a larger forbidden band width is provided further thereon to a laminated form. This laminated structure is the same as the double hetero junction structure of the semiconductor laser device, the active layer of which is used as the channel. The potential under a gate electrode 9 of the channel is controlled by the impressed voltage of the electrode, and impressing a positive potential on the electrode causes an increase of the injected electron flow of the channel. On the other hand, impressing a negative potential causes a decrease of the flow, resulting in OFF control. This controlled speed is proportional to the electron mobility of the channel, and the channel is formed of a semiconductor layer containing little impurity; therefore the operating speed becomes higher by the amount equal to the negligible impurity scattering.

Inventors

• 👤 Takao Uchiumi
• 👤 孝雄 内海
• 👤 Itsuo Hayashi
• 👤 林　厳雄

Bibliographic Details