Device for semiconductor surface etching process

Abstract

Abstract PURPOSE:To contrive improvement in the yield of production, in the reduction of manhours and to cut down the cost of production by a method wherein the condition of film located on a plate type material to be processed is monitored using an optical means, thereby enabling to perform a processing under stabilized conditions. CONSTITUTION:An aluminum vapor-deposited film is formed, a semiconductor wafer 15 whereon a mask of prescribed pattern is formed is positioned on a ratating stand 3, it is rotated by a spinner 4, a beam of light is projected on the wafer surface by a projector 9, and the reflected light is received by a light-receiving device 10. The spray nozzle of a treatment solution feeding device is opened, and an etchant is sprayed on the wafer surface. When the surface of the wafer 15 is exposed as an etching process makes progress, the signal sent from a photoelectric switch becomes weak, the spray nozzle is blocked when said signal is made smaller than the set value, and the spraying of etchant comes to a stop. After pure water sent from the spray nozzle has been sprayed for the prescribed period, a dehydrating and drying up processes are performed by operating the spinner only for the prescribed period.

Inventors

• 👤 Isamu Seki
• 👤 関　勇
• 👤 Hiroto Nagatomo
• 👤 長友　宏人

Bibliographic Details