Low pressure CVD equipment

Abstract

Abstract PURPOSE:To form a thin SiO2 film with a uniform thickness onto a wafer, in forming the thin SiO2 film to the surface of the wafer by a vacuum CVD apparatus, by introducing reactive gas into a reaction tube, in which a large number of wafers are arranged in a vertical state, so as to flow the same along the surfaces of said wafers. CONSTITUTION:A large number of wafers 5 are arranged vertically in the inner reaction tube 10 within a double reaction tube apparatus made of quartz consisting of an outer reaction tube 9 and the inner reaction tube 10. The space between the inner and outer reaction tubes 9, 10 are divided left and right by a flange 11 so as to be partitioned into a reactive gas supply side 14 and a reactive gas exhaust side 15. A large number of nozzles 12, of which the lengths are different, are provided to the reactive gas supply side 14 and a gaseous mixture 2 consisting of O2 or NO2 and carrier gas He and SiH4-gas 3 are supplied to the nozzles 12. These gases enter the inner reaction tube 10 from a large number of perforations in a uniform concn. and are flowed along the surfaces of the wafers 5 to form a thin SiO2 film formed by the reaction of SiH4 and O2 or NO2 in a uniform thickness.

Inventors

• 👤 Hironobu Miya
• 👤 博信 宮

Bibliographic Details