Lateral light emitting light emitting diode array structure

Abstract

Abstract PURPOSE:To eliminate a light leakage by forming light absorbing layers on the opposite side to the junction side, and forming a notch which extends to the opposite side surface to the junction side of the firset conductive type layer continued to a gap between the second conductive type layers. CONSTITUTION:High density Zn- and Ge-doped layers 6, 7 are formed on the surface of a P type layer 1 and an N type layer 2, and acted as a light absorbing layer. A plurality of fine slots 7 which exceed a P-N junction surface 3 are formed from the side of the layer 1, and the layer 1 is divided into a plurality of portions. Two ends perpendicularly crossing the slots 8 are cut substantially perpendicularly to the P-N junction surface 3 as light emitting surfaces 10a, 10b. A notch 9 which extends to the surface of the layer 2 is formed continuously to the fine slots 8 on the rear end 10b. Thus, an LED array 20 in which a plurality of layers 1 isolated via the slots 8 are aligned on the common layer 2 is obtained.

Inventors

• 👤 Nobuharu Nozaki
• 👤 野崎　信春
• 👤 Toshio Iijima
• 👤 飯島　俊雄
• 👤 Kazuhiro Kawajiri
• 👤 和廣 川尻
• 👤 Yuzo Mizobuchi
• 👤 裕三 溝渕

Bibliographic Details