Semiconductor laser element

Abstract

Abstract PURPOSE:To concentrate currents flowing through a p type AlGaAs active layer only to a striped n type AlGaAs clad layer, and to obtain a high optical output by previously surrounding both sides of the clad layer by AlGaAs clad layers, which have the same composition as the clad layer but have an i type, when the n type clad layer is formed on an n type GaAs substrate and shaping the active layer on these clad layers. CONSTITUTION:A striped n type Al1-yGayAs clad layer 2b is formed on an n type GaAs substrate 1, and both sides of the clad layer 2b are surrounded by i type Al1-yGayAs clad layers 2a. A p type Al1-xGaxAs active layer 3 and a p type Al1-yGayAs clad layer 4 are laminated on the whole surfaces of the clad layers and grown in an epitaxial manner, and the upper section of the clad layer 4 is coated with a p type GaAs contact layer 5. Accordingly, currents flowing through the substrate 1 from the active layer 3 are concentrated to the striped n type clad layer 2b, and a kink phenomenon and the instability of a lateral mode are eliminated.

Inventors

• 👤 Shoichi Kakimoto
• 👤 柿本　昇一
• 👤 Misao Hironaka
• 👤 広中　美佐夫
• 👤 Yutaka Mihashi
• 👤 三橋　豊
• 👤 「たか」宮　三郎
• 👤 Saburo Takamiya

Bibliographic Details