Mesa etching isolation type monolithic display light-emitting diode

Abstract

Abstract PURPOSE:To prevent the leakage of beams from the periphery of a light-emitting element, to display accurate character and figure patterns distinctly and to improve reliability as a product by forming an insulating film to the surface of a substrate and shaping an electrode layer having no transmitting properties to the surface of the insulating film so as to surround the peripheries of each light-emitting element. CONSTITUTION:Light-emitting elements 1 are mesa-etched up to a substrate 10, and each insulated and isolated. The substrate 10 consists of a semiconductor such as N type GaAs, transparent N type GaAlAs 20 is formed to the surface of the substrate, a light-emitting layer 21 composed of P type GaAlAs is shaped to the upper section of the N type GaAlAs 20, and both the N type GaAlAs 20 and the light-emitting layer are hetero-joined. Transparent P type GaAlAs 22 is formed to the surface of the light-emitting layer 21, a contact layer 23 composed of P<+> type GaAs is shaped to the upper section of the P type GaAlAs 22, and an electrode layer 41 is formed onto the back of the substrate. Insulating films 30 are composed of a film such as a nitride film, etc., and shaped to the surfaces of the substrate except sections in which each light-emitting element 1 emits light, and electrode layers 40 shaped along the side surfaces of the light-emitting elements 1 prevent short circuits among P-N junction surfaces in several light-emitting element 1. Forward voltage is applied to the electrode layers 40, and the light-emitting layer 21 is light-emitted.

Inventors

• 👤 Atsushi Ichihara
• 👤 淳 市原
• 👤 Haruo Tanaka
• 👤 田中　治夫

Bibliographic Details