Semiconductor laser device and manufacture thereof

Abstract

Abstract PURPOSE:To obtain narrow striped structure easily on the inside by forming a thin-film layer having conductivity reverse to a conductive substrate on the substrate with an inverted mesa-shaped stepped section and shaping multilayer thin- films containing double hetero-structure on the thin-film layer. CONSTITUTION:A stepped section 2 is formed on a P type GaAs substrate 1. The section of the stepped section 2 takes an inverted mesa shape. The growing surface of the substrate is washed by an organic solvent, etc., and a crystal is grown. A clad layer 4, an active layer 5, a clad layer 6 and an N type GaAs layer 7 are formed on the stepped section after an N-GaAs layer 3 is grown, and growth is completed when the growing surface is cladded. When electrodes are manufactured to both the P type GaAs substrate 1 and the N type GaAs layer 7 and currents are flowed, currents are injected in width (d), and current constriction is realized. It is because the N type GaAs layer 3 shapes a P/N junction together with the clad layer 4 and the P/N junction is reverse-biassed on the injection of currents.

Inventors

• 👤 Akio Yoshikawa
• 👤 昭男 吉川
• 👤 Masaru Kazumura
• 👤 数村　勝

Bibliographic Details