Semiconductor device

Abstract

Abstract PURPOSE:To improve the corrosion resistance by a method wherein a region alloyed with anticorrosive metallic material is provided on the surface of outer terminal of a semiconductor chip. CONSTITUTION:A field insulating film 7 separating semiconductor elements and another insulating film 8 separating a semiconduc-element from a conductive layer are formed on a semiconductor substrate 6. A conductive layer 9 provided on the upper part of insulating film 8 during the manufacturing process of semiconductor chip 3 comprising a wiring 9A of inner integrated circuit and an outer terminal 9B of the inner integrated circuit and an outer equipment is formed of aluminium or aluminium silicon metallic material. The conductive layer 9 is covered with the other insulating film 10 to be protected from outer atmosphere. Besides, an opening 10A provided by selectively removing the insulating film 10 on the upper part of outer terminal 9B is used to connect the upper terminal 9A to a bonding wire 4. The upper part of outer terminal 9B may be coated with a metallic layer 11 comprising palladium, gold, nickel and manganese, etc. while an alloyed region 11A on the surface of outer terminal 9B is formed by means of diffusing a part of metallic layer 11 on the surface of terminal 9A. Through these procedures, the corrosion resistance of semiconductor chip may be improved remarkably.

Inventors

• 👤 Tatsuo Itagaki
• 👤 板垣　達夫
• 👤 Akira Suzuki
• 👤 明 鈴木

Bibliographic Details