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JPS60223136A Expired / Lapsed JP ⏱️ 0.0 years remaining

Semiconductor device

Assignee: Hitachi Ltd
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Filing: 1984-04-20
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Granted: —
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Expires: 2004-04-20
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Abstract

Abstract PURPOSE:To reduce thermal resistance, and to simplify structure and an assembly process by loading a semiconductor chip on a radiator fin through the cured layer of silicon rubber group adhesives having a thermal expansion coefficient, etc. coinciding with the characteristics of an silicon single crystal substrate constituting the semiconductor chip. CONSTITUTION:Silicon rubber group adhesives 14 are applied onto a radiator fin 13 made of a metal, a semiconductor chip with an silicon single crystal substrate is loaded on the upper surface of the adhesives 14, the same silicon rubber group adhesives 17 are applied so that a lead frame can be mounted, the semiconductor chip 18 is die-bonded onto the adhesive layer 14 by the adhesives 17, and the nose sections arranged in a plural number of the lead frame 19 are fixed. The whole is baked, pads on the semiconductor chip 18 and one tip sections of connector wires 20 are bonded through a known ultrasonic bonding method, etc., and the other tip sections of the connector wires 20 are bonded similarly with pads on the lead frame 19.

Inventors

  • 👤 Kazuo Ito
  • 👤 一夫 伊藤

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-09 22:05
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/071; H10W72/073; H10W70/00; H10W70/60; H10W70/67; H10W70/68; H10W70/682; H10W70/685; H10W72/07331; H10W72/07337; H10W72/50; H10W72/531; H10W72/5363; H10W72/851; H10W72/874; H10W72/884; H10W90/00; H10W90/701; H10W90/731; H10W90/734

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