Solid-state image pickup element and its manufacture

Abstract

Abstract PURPOSE:To obtain a solid-state image pickup element without blooming and smear by forming at least a part of a conductive semiconductor as a region shallower than other parts and making the impurity concentration of a circumferential part of the shallow region thin. CONSTITUTION:A P type impurity is led to a p channel substrate 22 with ion implantation or diffusion so as to form a P well 21. A region 42 without any P type impurity is formed to a corresponding part of a region 31 by forming a photo resist or an oxide film 41 as a mask to said part. Then the shallow region 31 and a region 32 having less concentration at a part of the P-well surrounding the region 31 are formed at the same time by heat treatment so as to activate and diffuse the P type impurity (b). Thus, through conventional processes (c) and (d), an objective solid-state image pickup element is obtained finally (e).

Inventors

• 👤 Masao Yamawaki
• 👤 正雄 山脇

Bibliographic Details