Semiconductor laser-array device

Abstract

Abstract PURPOSE:To provide with an improved yield a laser-array device capable of generating a phase-synchronized high-energy beam by a method wherein passive waveguides are provided between active waveguides and the end faces of the active waveguides are different from the end faces of the passive waveguides in reflectivity. CONSTITUTION:Resistive electrodes 8, 9 are built on the substrate and on the grown layers, respectively, and the end faces are exposed by cleavage. The end faces are coated with non-reflection films 102 and the end faces of active waveguides 10 are further provided by evaporation with metal films 101 of Cr, Au, or the like, for a 100% reflectivity. As for the difference between the elements in terms of the transverse refraction index, it will be larger in an active waveguide 10 than the reduction (DELTAnfcapprox.= 10<-3>) of the refractive index due to carrier injection. In a passive waveguide 11, there will be a difference in refractive indices (DELTAnapprox.=5X10<-4>) that is great enough to guide optical beams of the TE mode. With the device designed as such, there will be a 90 deg. deviation in phase between the photoelectric fields respectively of the passive waveguides 11 and active waveguides 10. With the reflectivity at the end faces 101, 102 being respectively 100%, 0%, there will be another 90 deg. phase deviation in the electric field under the environmental conditions surrounding the end faces 101, 102.

Inventors

• 👤 Mototaka Tanetani
• 👤 元隆 種谷
• 👤 Kaneki Matsui
• 👤 完益 松井
• 👤 Saburo Yamamoto
• 👤 三郎 山本
• 👤 Morichika Yano
• 👤 矢野　盛規

Bibliographic Details