Copper alloy for lead material for semiconductor device

Abstract

Abstract PURPOSE:To obtain a lead material for a semiconductor device having superior strength, electric conductivity, heat resistance and elongation by adding specified amounts of Cr, Zr, Mg and Zn combined optionally with a specified amount of Si to Cu. CONSTITUTION:A Cu alloy contg. 0.05-0.4% Cr, 0.01-0.2% Zr, 0.001-0.12% Mg and 0.002-0.2% Zn or further contg. 0.001-0.1% Si is used as a lead material for a semiconductor device such as IC or LSI. The Cu alloy has 50-56kg/mm.<2> tensile strength, 85-94% IACS electric conductivity, 450-500 deg.C semisoftening temp., 8.0-10.3% elongation and superior suitability to plating.

Inventors

• 👤 Masao Kobayashi
• 👤 正男 小林
• 👤 Takuro Iwamura
• 👤 岩村　卓郎

Bibliographic Details