Semiconductor light emitting element

Abstract

Abstract PURPOSE:To obtain the titled element whereby a low threshold value current density, good temperature characteristic and the like can be obtained while noise light from a photo confinement layer is reduced by a method wherein the photo confinement layer is put in the quantum well structure having the quantum size effect of a monolayer or a multilayer. CONSTITUTION:A clad layer 31 and a barrier layer 32 are made of Al0.22Ga0.78As, and an active layer 33 and a well layer 34 are made of GaAs, then, an energy band end 35 is repeated at short periods in the photo confinement layer. The energy level in this photo confinement layer can be varied by varying the layer thickness of the well layer. On the other hand, the refractive index of the photo confinement layer is almost proportional to the energy gap, and the refractive index is almost at the average of those of the clad layer 31 and the active layer 33. The lowest level 36 is made higher than the average level 37 determined by the structure, and the average refractive index can obtain an average refractive index possible larger than the energy level 37. Thereby, the coefficient of photo confinement increases, few electrons come to overflow from the photo confinement layer at the time of high injection. Accordingly, noise light corresponding to the photo confinement layer does not generate, and stable laser oscillation can be yielded.

Inventors

• 👤 Kenichi Nishi
• 👤 研一 西

Bibliographic Details