Reversely conductive gate turn-off thyristor

Abstract

Abstract PURPOSE:To check erroneous striggering of a reversely conductive gate turn-off thyristor without reducing the substantial areas of the gate turn-off thyristor (GTO) part and the reversely conductive diode part by a method wherein surface concentration of impurities of an anode emitter in the neighborhood directly under a cathode emitter in the neighborhood of the reversely conductive diode is made to concentration lower by one figure or more than the other positions. CONSTITUTION:Surface concentration of impurities of the high concentration part (P<+>) 2 of an anode emitter layer is 1.0X10<18>cm<-3>, and surface concentration of impurities of the low concentration part 2' is 5.0X10<16>cm<-3>, and diffusion depths are 70mum together, for example. Impurity concentration of an N<-> type base layer 4 is 2.6X10<13>cm<-3>, width thereof is 600mum, a P type base layer 5 is diffused as to make surface concentration of impurities to be 2.5X10<17>cm<-3>, diffusion depth to be 60mum, and after then, N<+> type emitter layers 8 are diffused as to make surface concentration of impurities to be 2X10<20>cm<-3>, and diffusion depth to be 20mum. Surface concentration of impurities of the cathode layer 3 of a diode part is 2.0X10<19>cm<-3>, diffusion depth thereof is 70mum, the anode layer 6 of the diode part is diffused at the same time with the P type layer 5 of a GTO part, and a groove 12 is provided between the GTO part and the diode part to check generation of a short of negative bias to be applied at gate turn-off time.

Inventors

• 👤 Katsuhiko Takigami
• 👤 滝上　克彦
• 👤 Masayuki Asaka
• 👤 浅香　正行
• 👤 Takashi Yotsudo
• 👤 孝 四戸

Bibliographic Details