Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To make a crystalline layer uniform by a method wherein an amorphous or polycrystalline compound semiconductor layer to be recrystallized is formed on an insulating substrate and a heating layer which has a higher melting point than the semiconductor layer is formed on the semiconductor layer. CONSTITUTION:An amorphous or polycrystalline compound semiconductor layer 2 to be recrystallized is formed on an insulating substrate 1. A heating layer 3 which has a higher melting point than the compound semiconductor is formed on the semiconductor layer 2. The heating layer 3 is composed of a thin diffusion blocking layer 4 deposited by a depressurized CVD method and a heat receiving layer 5 of a polycrystalline silicon film. A laser beam is applied to the heat receiving layer 5 of the heating layer 3 to absorb the energy and the diffusion into the semiconductor 2 is blocked by the diffusion blocking layer 4. The temperature gradient of the semiconductor layer 2 at the time of melting is reduced and the distortion or the like is avoided and the composition at the time of recrystallization is made uniform.

Inventors

• 👤 Kazuyuki Sugahara
• 👤 和之 須賀原

Bibliographic Details