Semiconductor laser device

Abstract

Abstract PURPOSE:To obtain the titled device of high-output and high-reliability oscillating on stable basic lateral modes also during high output action by a method wherein a semiconductor layer of the second conductivity type is provided on a semiconductor substrate of the first conductivity type having a mesa stripe, and thereafter two mesa stripes are formed. CONSTITUTION:A mesa stripe 10-2 is formed on the P-GaAs substrate 1-1, and N-GaAs 2 is grown so that the surface may become flat. Next, the two mesa stripes 10-3 are formed in such a manner that a groove 7 is present above the mesa stripe 10-2 on the substrate 1-1. Then, a P-GaAlAs clad layer 3, a GaAlAs active layer 4, an N-GaAlAs clad layer 5, and an N-GaAs cap layer 6 are successively grown. In this structure, inner current stricture is realized by a current stricture layer 2, and current flows in concentration to the light emitting region. Besides, a double hetero structure is formed on the two mesa stripes 10-3; therefore, an active layer 4 excellent in crystallinity and composition uniformity can be grown with good reproducibility.

Inventors

• 👤 So Otoshi
• 👤 創 大歳
• 👤 Naoki Kayane
• 👤 茅根　直樹
• 👤 Takashi Kajimura
• 👤 梶村　俊

Bibliographic Details