Semiconductor device

Abstract

Abstract PURPOSE:To obtain a semiconductor device having an electrode substrate and a heat dissipating substrate with high heat conductivity, by forming at least one of the electrode substrate and a heat dissipating substrate for supporting the semiconductor or a heat dissipating substrate secured on the rear face of an insulation substrate, with a composite material of leno-woven Cu-C fibers. CONSTITUTION:A net of Cu-C is produced by intertwining two fiber budles so as to embraceanother fiber bundle between them. Bundles twice as many as those supplied in the longitudinal direction are supplied in the transverse direction. The number of the fiber bundles in the transverse direction, however, becomes equivalent to that of the fiber bundles in the longitudinal direction since they are intertwined. The net is therefore freed of warpage or anisotropy in thermal expansivity or the like. Even if hot pressed at a high temperature and under a high pressure, the fibers are not spread out so that gaps 3 are left therebetween. The Cu having a high temperature conductivity is collected in these gaps. When heat is applied in the direction of thickness, the Cu in the gaps serives as heat pipes. Thus the Cu-c plate is provided with good heat dissipating property and a high heat conductivity. Since the matrices are embraced by the C fibers, a thermal expansivity equivalent to that of a plain-woven material can be obtained.

Inventors

• 👤 Akio Chiba
• 👤 秋雄 千葉
• 👤 Keiichi Kuniya
• 👤 国谷　啓一
• 👤 Hideo Arakawa
• 👤 英夫 荒川
• 👤 Shigeo Tsuruoka
• 👤 鶴岡　重雄

Bibliographic Details