Growth of magnetic garnet material

Abstract

Abstract PURPOSE:In growing a Bi-containing garnet single crystal film, to make it easy to remove remaining melt after liquid-phase epitaxial growth, by using a nonmagnetic garnet substrate. CONSTITUTION:A flux of PbO-Bi2O3 system or PbO-Bi2O3-B2O3 system is prepared. By the use of this flux, a garnet LPE film such as (LuBi)3Fe5O12, etc. is grown on a nonmagnetic garnet single crystal substrate having a crystallographical orientation of growth plane specified to {110} or {211} by liquid-phase epitaxial method. By this method, a magnetic garnet material with no defect is obtained without attaching a remaining melt to the surface of grown film.

Inventors

• 👤 Taketoshi Hibiya
• 👤 孟俊 日比谷

Bibliographic Details