Growing method of tungsten silicide film

Abstract

Abstract PURPOSE:To flatten the surface of a film at one stage by covering a silicon substrate with an insulating film formed with an aperture, embedding the aperture with a W layer under specific conditions and forming further W-Si on the insulating film and the W layer under specific conditions. CONSTITUTION:An insulating film (PSG, etc.) 2 is formed on the surface of a silicon substrate 1 and an aperture 4 is formed to the point where contact is taken. Gaseous WF6 and N2 are then supplied as gaseous raw material and the temp. of a reactor is maintained at 300-350 deg.C to grow a W layer 6 on the surface of the substrate 1 in the aperture 4 in chemical vapor phase under the reduced pressure. The W layer 6 having good adhesion is thus obtd. with decrease penetration 5. WF4 and SiH4 are then supplied and W-Si is uniformly grown on the film 2 and on the W layer 6 in the aperture 4 at 350-450 deg.C under the reduced pressure with good adhesion. The step (h) in the aperture 4 is thereby considerably decreased to about 0-3,000Angstrom .

Inventors

• 👤 Yoshimi Shiotani
• 👤 喜美 塩谷

Bibliographic Details