Semiconductor device

Abstract

Abstract PURPOSE:To miniaturize a semiconductor device without lowering element characteristics by forming a conductive layer isolated from an element region by a dielectric layer in the semiconductor device having dielectric isolation structure. CONSTITUTION:A plurality of element forming regions 3 are formed on a poly Si substrate 1 while being isolated by SiO2 films 2. Conductive poly Si 12 in approximately 2mum thickness to which As is added in high concentration is shaped, and isolated from the element forming region 3 by an Si3N4 film 13 in 4mum thickness. A window is bored to the bottom of the film 13 to connect the region 3 and the conductive layer 12. According to the constitution, a space between a base layer 5 and the wall 13 of the element forming region is reduced to approximately 10mum and withstanding voltage of 400V is obtained when the base layer 5 is 5mum deep, 5mum can be reduced on one side in the horizontal direction even in consideration of the thickness of the layers 12, 13 and 10mum on both sides of the base layer 5, and a device having dielectric isolation structure, which can be miniaturized without lowering element characteristics, is acquired.

Inventors

• 👤 Hajime Ono
• 👤 肇 小野

Bibliographic Details