Manufacture of thin film transistor

Abstract

Abstract PURPOSE:To enable to perform a selective etching on a thin film as well as to simplify the surface processing in the manufacture of a thin film transistor by a method wherein the amorphous silicon film manufactured by performing a plasma chemical vapor-phase growing method is used as a semiconductor layer. CONSTITUTION:A patterning is performed on the first a-Si layer 8 and the second a-Si layer 10 using a photolithographic method. Then, an etching is performed on the third insulative layer (SiO2 layer) 9 and the first insulative layer (SiO2 layer) 6 by performing BHF using the second a-Si layer 10 and the second insulative layer (SiNx) 7 as a mask. Then, the surface of the first a-Si layer 8 and a gate electrode 2 are exposed. Subsequently, after the second a-Si layer 10 has been removed by dipping into an NaOH or APW aqueous solution, an aluminum source and drain electrode 5 is formed by performing a method ordinarily in use, and a TFT is formed using the a-Si layer 8.

Inventors

• 👤 Mamoru Takeda
• 👤 守 竹田
• 👤 Kenichi Fujii
• 👤 謙一 藤井
• 👤 Tatsuhiko Tamura
• 👤 達彦 田村
• 👤 Hiroaki Kamiura
• 👤 上浦　宏明
• 👤 Shinichi Ogo
• 👤 小郷　伸一

Bibliographic Details