Semiconductor device and manufacture thereof

Abstract

Abstract PURPOSE:To prevent an electrode wiring from causing step coverage without high-temperature treatment, by providing an electrode window with stairs-like steps from the ends of the window along the longitudinal directions of the electrode wiring. CONSTITUTION:An Si substrate 1 is provided with an impurity region 2 which is covered with an SiO2 film 3, and resist is superposed thereon. A rectangular window 5 including the region 2 and extending from both sides of the region 2 along the longitudinal directions of wiring is provided, and a half of the thickness of the film 3 is etched away to form a rectangular groove 6. Subsequently, resist 7 is further superposed and a rectangular hole 8 is provided so as to intersect the hole 5 orthogonally. When the film 3 is etched away to expose the region 2 and the resists 4 and 7 are removed, an electrode window extending stepwise only in the longitudinal directions of the wiring is completed. A wiring 10 of a predetermined pattern is then applied thereto. In such a manner, no step coverage is caused at least in the longitudinal directions of the wiring, and the integration density is not decreased.

Inventors

• 👤 Takehide Shirato
• 👤 猛英 白土
• 👤 Hidehiko Shiraiwa
• 👤 英彦 白岩

Bibliographic Details