Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To form a transistor of low base resistance by making a base lead-out electrode of a metal film by a method wherein a high melting point metal film is formed after a lift-off film is formed, and impurity ions are implanted via this metal film. CONSTITUTION:Lift-off films 14, 16, and 18 are formed on the emitter-forming region 20 of a semiconductor substrate 10. Next, the high melting point metal films 22 are formed on the base-forming region 24 adjacent to the region 20 and on the films 14, 16, and 18. Then, impurity ions are implanted to the region 24 adjacent to the region 20 via metal film 22. A passivation film 26 is grown on the metal film 22. The films 14, 16, and 18 are removed, and the metal film 22 and the passivation film 26 thereon are removed. Impurities are introduced to the region 20. Since the films 14, 16, and 18 determine the positions of the base lead-out electrode and the emitter region 30, self-alignment is enabled.

Inventors

• 👤 Hiroshi Goto
• 👤 広志 後藤

Bibliographic Details