Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To inhibit the growth of bird beaks by a method wherein a nitride film and an oxide film are grown on a substrate, both of which films are then patterned, and oxygen is ion-implanted with these films as a mask, thus oxidizing the substrate with the nitride film as a mask. CONSTITUTION:A pressure reduced vapor phase growing Si3N4 film 9 is grown after an SiO2 film 8 is grown by thermally oxidizing the Si substrate 7, and thereafter an element region 11 and the like are patterned. Next, a high concentration oxygen implanted layer 13 is formed by oxygen ion implantation to an isolation region 12. Then, after an SiO2 film 14 is grown by selective oxidation with the film 9 as a mask, and by annealing, the film 9 is etched. At this time, said implanted layer in the isolation region is faster in oxidation speed than the element region Si substrate in the transverse direction; thereby, the growth of bird beaks can be suppressed to as low as 0.4-0.5mum.

Inventors

• 👤 Yukio Morozumi
• 👤 幸男 両角

Bibliographic Details