Vapor growth deposition device

Abstract

Abstract PURPOSE:To discharge the residual gaseous raw material in a supply piping for the gaseous raw material and to improve the steepness between many kinds of thin films by connecting an inert gas introducing piping and a piping for discharging gas via a selector valve to the supply piping. CONSTITUTION:A piping 9 for supplying an inert gas to a gaseous raw material is connected to the downstream side of a piping 6 for supplying the gaseous raw material to a quartz reaction tube 1 and a piping 7 for discharging the swept gas is connected to the upstream side of the piping 6. A valve 11 is first closed to interrupt the supply of the gaseous raw material in the stage of stoppiig the epitaxial growth on the surface of a substrate 3. Valves 12, 13 are opened to feed the gas such as hydrogen or the like inert to the gaseous raw material to the piping 9 from which the gas is passed through the piping 6 and is discharged through the piping 7. As a result the residual raw material in the piping 6 is discharged together with the inert gas and growth of the crystal is stopped in short time. The gentleness in the compsn. between the thin films is suppressed by the above-mentioned device by which the steepness is improved and the performance of a semiconductor, etc. is improved.

Inventors

• 👤 Akihiko Okamoto
• 👤 明彦 岡本

Bibliographic Details