Photomask

Abstract

Abstract PURPOSE:To eliminate an underexposed resist film remaining on the lower side of each part having a level difference, by forming a mixture of an opaque film mask pattern in a prescribed form and a semitransparent film in a prescribed form on one principal face of a transparent base to constitute a photomask. CONSTITUTION:A semitransparent film 35 made of iron oxide or the like higher in light transmittance than a Cr film is attached to a base 31, and on this film 35 a resist film is formed by coating, and formed to a prescribed pattern to prepare a resist film pattern 36. The film 35 is selectively etched with an HCl type soln. by using said pattern 36 as a mask, and further the pattern 36 is also dissolved off to obtain a photomask provided with semitransparent film patterns 37 located on the side boards of the opaque Cr patterns 34 in a prescribed width and capable of intercepting light incident from the sides.

Inventors

• 👤 Akira Kakehi
• 👤 筧　朗
• 👤 Kunio Hata
• 👤 畑　邦夫

Bibliographic Details