Gate circuit of compound semiconductor element

Abstract

Abstract PURPOSE:To prevent an SIT or JEET incorporating semiconductor like GaAs from excessive bipolar transistor behavior and thereby to control the device with safety for the realization of high-speed operations by a method wherein a clamp circuit is provided limiting the forward bias voltage between gate and source. CONSTITUTION:A gate circuit 14 consists of a positive gate power source 15, negative gate power source 16, switch 18 switching between the power sources 15, 16 to supply power to a gate, and a clamp circuit wherein two Zener diodes 17-1, 17-2 are connected serially, back to back. The Zener diodes 17-1, 17-2 using GaAs and an SIT13 are built into one. The yield voltage is set at a value roughly similar to the gate/source built-in voltage of the SIT13. With the circuit designed as such, when the positive gate power source 15 is connected to the SIT13 for a bipolar-type operation, and even if a sufficiently high voltage is supplied by the positive gate power source 15, the voltage applied across the gate and source of the SIT13 will not exceed the built-in voltage.

Inventors

• 👤 Akio Nakagawa
• 👤 明夫 中川
• 👤 Hiromichi Ohashi
• 👤 大橋　弘道

Bibliographic Details