Plasma cvd equipment

Abstract

Abstract PURPOSE:To obtain an oxide film having a uniform thickness and uniform characteristics in a hot-wall plasma CVD equipment, by providing at least one SiH4 introducing pipe in the reaction tube so as to run along the axis of the tube. CONSTITUTION:A reaction container 1 made of quartz is provided on the both ends thereof with a front cap 6 and a rear end cap 7, respectively. The cap 6 is connected with a piping 3-a for SiH4 and a piping 3-b for N2O both from a gas dilution 3. The piping 3-b is stopped in the cap 6, while the piping 3-a is connected to a plurality of SiH4 gas introducing pipes provided along the inner ceiling of the container 1. Further, a plurality of wafer holding boats and electrodes 8 which are vertically parallel to each other are provided within the container 1, and these connectors 8 are passed through the cap 7 to be taken out and connected to an RF oscillator 5. A piping of an exhaust pump 4 is also connected to pass through the cap 7.

Inventors

• 👤 Yasuhiko Matsumoto
• 👤 康彦 松本
• 👤 Hajime Kosugi
• 👤 肇 小杉

Bibliographic Details