Bidirectional wavelength conversion element

Abstract

Abstract PURPOSE:To enable to efficiently convert wavelengths between two difference wavelengths by a bidirectional wavelength conversion element by composing of p-n-p (or n-p-n) type transistor structure of direct transient semiconductor material. CONSTITUTION:A bidirectional wavelength conversion element is composed in a p-n-p type transistor of a p type Ga1-xAlxAs layer 1, an n type Ga1-yAlyAs layer 2 and a p type Ga1-zAlzAs layer 3. An external bias voltage V is applied between the electrodes 4 and 5 so that a reverse bias is applied between the layers 1 and 2 and a forward bias is applied between the layers 2 and 3. The incident light of wavelength lambda1 is introduced to the layer 1 of a band gap Eg1, thereby generating photons. The generated photons are flowed to the layer 2 by a reverse bias electric field applied between the layes 1 and 2. The flowed electrons are injected to the layer 3, and light is emitted to be recombined in this region.

Inventors

• 👤 Hiroshi Okuda
• 👤 奥田　寛

Bibliographic Details