Manufacture of semiconductor photoreceptor

Abstract

Abstract PURPOSE:To obtain a desired guard ring effect by etching the part larger than the specific value of the depth of the region which includes an impurity to be formed for the guard ring. CONSTITUTION:An SiO2 film 2 is formed on an N type Ge substrate 1, and a hole of endless strip is formed at the position where a guard ring is arranged. With the film 2 as a mask Be ions are implanted into the substrate 1, and a region 3 is formed. The film 2 is removed, an SiO2 film 4 is newly formed, and a P type region which includes Be as a guard ring 5 is formed. The film 4 is removed, and etched to 1/3 of the depth of the region which includes the impurity formed for the guard ring 5. Then, boron is implanted to form a photoreceiving region P<+> type region 6, and an SiO2 film is newly formed on the overall surface. The surface of the Ge substrate 1 is again etched. Subsequently, a P type side electrode 9 is formed by using a protective film 9 of SiO2 and aluminum.

Inventors

• 👤 Shuzo Kagawa
• 👤 修三 香川

Bibliographic Details