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JPS5997104A Expired / Lapsed JP ⏱️ 0.0 years remaining

Production of echelette type diffraction grating

Assignee: Sumitomo Electric Industries Ltd
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Filing: 1982-11-27
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Granted: —
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Expires: 2002-11-27
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Abstract

Abstract PURPOSE:To form easily an echelette type diffraction grating having a blaze angle by subjecting a substrate, which has a resist mask on the surface, to anisotropic dry etching from the direction diagonal to the surface of the substrate in the direction intersecting the extension direction of the grating thereof. CONSTITUTION:A titled method consists of a resist mask forming process and an anisotropic dry etching process. A resist mask 12 arranged like a grating at every distance (d) is formed by a photolithographic technique on the surface of an InP substrate 10 in the resist mask forming process. The substrate 10 is disposed with an inclination in an ion sheath at an angle theta to the plane of a lower electrode 26 on the electrode 26 in the state of having the extension direction of the pattern 12 in parallel with the electrode 26 in the anisotropic dry etching process. Such substrate is subjected to anisotropic dry etching, whereby saw tooth-like grooves are formed thereon.

Inventors

  • 👤 Yoshikazu Nishiwaki
  • 👤 西脇 由和
  • 👤 Haruji Matsuoka
  • 👤 松岡 春治
  • 👤 Kenji Okamoto
  • 👤 賢司 岡本

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-01 11:51
CPC Classifications
G; G02; G02B; G02B5/00; G02B5/18; G02B5/1847; G02B5/1857

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