Mos type semiconductor integrated circuit

Abstract

Abstract PURPOSE:To reduce the difference of the characteristics of two sets of elements by connecting each of the drains, and each of the gate electrodes of two MOS transistors which are disposed in a point symmetrical positional relationship to the central point of a common source region. CONSTITUTION:A common source region 22 is extended in the prescribed direction on a semiconductor substrate 20. Drain regions 22C, 22D which have the same areas as drain regions 22A, 22B are arranged by two along a pair of long sides of the region 21. Gate electrodes 25A-25D are formed on the surface of the substrate 20 between the region 21 and four regions 22A-22D. MOS transistors 27A, 27D and 27B, 27C are disposed in a point symmetrical relationship to the central point of the region 21. The regions 22A and 22D, the regions 22B and 22C, the electrodes 25A and 25D, the electrodes 25B and 25C are respectively connected via diffused wiring layers 24A-24G, and wiring layers 26A-26G.

Inventors

• 👤 Shigeru Yamada
• 👤 繁 山田

Bibliographic Details