Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To make it possible to easily verify afterward a recording paper on which electrical properties are recorded and a semiconductor chip on which a circuit element is formed, by including a step of forming a symbol representing the position of the integrated circuit chip in the state of a substrate before the substrate is divided into integrated circuit chips. CONSTITUTION:On a P type Si substrate 1 to form semiconductor devices, such as ICs or LSIs, and SiO2 film is formed by thermal oxidation, and an Si3N4 film 3 is formed on the film 2 by CVD. With a window-opened photoresist film 4 employed as a mask, the substrate 1 is plasma-etched to form the Si3N4 film 3 into a predetermined pattern. At the same time, a window is opened to form a fine opening 5 beforehand. An SiO2 film 6 for separating elements from each other is formed on the substrate, and an SiO2 film 7 of minute shape is also on the substrate at the fine opening 5 such that the shape of the film 7 forms a symbol 14 for each of the portions of the Si substrate 13 which are defined by scribe lines 11, 12.

Inventors

• 👤 Hideaki Ozawa
• 👤 小沢　英明

Bibliographic Details