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JPS5989031A Expired / Lapsed JP ⏱️ 0.0 years remaining

Substrate bias generating circuit

Assignee: Toshiba Corp
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Filing: 1982-11-12
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Granted: —
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Expires: 2002-11-12
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Abstract

Abstract PURPOSE:To attain an external compensation for the variance in substrate bias voltage due to the variance of production processes, by varying the load capacity of an inverter constituting a ring oscillator. CONSTITUTION:A charge pump is driven by giving waveform shaping to the output signal of a ring oscillator. The output voltage of the charge pump is set at the substrate bias voltage of a 64K-bit dynamic memory, for example. A linear relation is obtained between the substrate bias voltage and the oscillation frequency of the ring oscillator. A capacitor is connected between inverters constituting a ring oscillator via a fuse element. The load capacity of an inverter is varied by cutting the fuse element. Then the oscillation frequency changes.

Inventors

  • 👤 Shozo Saito
  • 👤 斎藤 昇三

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-02 15:15
CPC Classifications
G; G05; G05F; G05F3/00; G05F3/02; G05F3/08; G05F3/10; G05F3/16; G05F3/20; G05F3/205

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