Manufacture of semiconductor element

Abstract

Abstract PURPOSE:To prevent an In metal from diffusing inside a substrate due to pinhole of Cr by a method wherein, after forming an Au layer on a P type compound semiconductor crystal containing Pb, a non-rectified quadruple layer film of Cr- Au-Cr-Au layer is formed and a lead-out electrode is formed on the quadruple layer film through the intermediary of the In metal layer. CONSTITUTION:A P type PbTe crystal layer as a buffer layer 22 is formed on a P type PbTe substrate 21. firstly after forming a P type Pb1-xSnxTe crystal layer as an active layer 23 on the layer 22, an N type Pb1-xSnxTe crystal layer as a closing layer 24 is further formed on the layer 23 and then said crystal layers are mesa-etched down to the buffer layer 22. Secondly after forming an anode oxide film 25 on the substrate 21, a part of the film 25 is removed by etching. Then Au layers 26, 27 are formed respectively on the bottom of substrate 21 and the anode oxide film 25. Then the Au layer 27 is connected to a heatsink 28. Thirdly a Cr evaporated layer 29, an Au evaporated layer 30, a Cr evaporated layer 31, an Au evaporated layer 32 are successively laminated on an Au evaporated layer 26 formed on the bottom of the substrate 21. Finally an Au ribbon 11 is bonded through an In layer 10 to form a lead-out electrode.

Inventors

• 👤 Hirokazu Fukuda
• 👤 福田　広和
• 👤 Koji Shinohara
• 👤 篠原　宏爾
• 👤 Yoshito Nishijima
• 👤 西嶋　由人
• 👤 Kosaku Yamamoto
• 👤 山本　功作

Bibliographic Details