Semiconductor device and manufacture thereof

Abstract

Abstract PURPOSE:To obtain a sufficiently large channel conductance and the capacitance of a capacitor without increasing the area of an element forming region by forming an electrode material through a thin insulating film on the side wall of a groove formed on an element isolating region. CONSTITUTION:With an aluminum layer 3 as a mask a silicon substrate 1 of an element isolating region is etched to form a groove 4, and boron ions are implanted to form a P<+> type layer 5. A CVD-SiO2 film (the first insulating film) 6 is accumulated on the entire surface, etched, and the film 6 on the groove 4 is selectively removed. The film 3 and a thermally oxidized film 2 are removed, and insular element region is formed in a structure that the film 6 remains in the groove 4 is formed. An oxidized film (the second oxidized film) 7 is formed to an MOS capacitor or an MOS transistor are formed. The effective channel width and the effective capacitance area can be increased in the amount corresponding to the side face, thereby microminiaturizing the element and enhancing the density.

Inventors

• 👤 Akira Kurosawa
• 👤 黒沢　景
• 👤 Sunao Shibata
• 👤 直 柴田
• 👤 Masashi Wada
• 👤 和田　正志

Bibliographic Details