Ultra-short gate field-effect transistor

Abstract

Abstract PURPOSE:To contrive improvement both in high frequency characteristics and ultra-high speed characteristics of the titled transistor by a method wherein, utilizing the two-dimensional carrier gas layer generating on the interface of the multilayer semiconductor as a gate electrode,the effective gate length is reduced approximately to the thickness of the two-dimensional carrier gas. CONSTITUTION:A low density P type second semiconductor 13 is formed on the high density P type first semiconductor 12, and the third semiconductor 14 whereon no impurities are added is formed on said semiconductor 13. Besides, in the semiconductor of multilayer structure consisting of a high density N type fourth semiconductor 14 formed on the third semiconductor, a high density P<+> type region 17 and the first semiconductor 12 are used as a source and a drain using a very thin two-dimensional electron gas layer 20, located on the interface of the above-mentioned second and the third optical conductors, as a gate, thereby enabling to operate the FET as one having the very short gate length.

Inventors

• 👤 Takayuki Sugata
• 👤 孝之 菅田
• 👤 Masamichi Omori
• 👤 大森　正道
• 👤 Yoshinori Kato
• 👤 加藤　嘉則

Bibliographic Details