Plasma etching device

Abstract

Abstract PURPOSE:To enable the processing of a minute pattern, and to prevent the deterioration of yield and quality by forming a mechanism which has a coaxial coil wound around an etching chamber and a parallel-plate electrode and selectively applies high frequency and can be used for the purpose. CONSTITUTION:The coaxial coil 2 wound around the etching chamber 1 and an anode 4 and a cathode 3 taking the structure of parallel plates are provided, and high-frequency voltage can be applied to the coaxial coil 2 and high-frequency voltage to the parallel-plate electrodes 3, 4 by selectively short-circuiting and opening switches 5, 6, 7, 8. That is, the etching chamber is connected to a vacuum pump 10 through an exhaust port 11, the coaxial coil 2 is set up around the etching chamber 1 with a gas introducing port 12, and one end of the coaxial coil 2 is connected to a high-frequency power supply 14 through the switch 7, and the other end is grounded through the switch 8. The parallel-plate electrodes consisting of the cathode 3 and the anode 4 are installed to upper and lower sections, and the cathode 3 is connected to a high-frequency power supply 13 through the switch 5, and the anode 4 is grounded through the switch 6.

Inventors

• 👤 Toru Imamura
• 👤 徹 今村

Bibliographic Details