Resin-sealed type semiconductor device

Abstract

Abstract PURPOSE:To obtain the titled semiconductor device, power consumption thereof is large, by separately manufacturing an island for loading an element and a lead. CONSTITUTION:The island 4 on which the IC3 is loaded and the leads 2 are manufactured separately, and the noses of the leads 2 are collected to the periphery of the IC3. According to the constitution, only the island 4 is enlarged without changing an external form, the method is not also restricted by materials, the island is manufactured by a material of high thermal conduction, and the resin-sealed type device, power consumption thereof is large, can be realized.

Inventors

• 👤 Terumasa Fukuda
• 👤 福田　照正

Bibliographic Details