Semiconductor laser

Abstract

Abstract PURPOSE:To simplify the manufacturing process by unnecessitating a push-in diffusion process, after Zn selective diffusion, which has been necessary in the case of a GaAs/AlGaAs TJS laser, by forming an InGaP which aligns with GaAs in lattice into a clad layer. CONSTITUTION:An N type InGaP clad layer 12, an N type GaAs active layer 3, an N type InGaP clad layer 14 and an N type GaAs cap layer 5 are successively grown on a semi-insulating GaAs substrate 1 by vapor growth, and thereafter the Zn diffusion which reaches the lower N type InGaAsP clad layer 12 from the surface of the N type GaAs cap layer 5 is performed into the region of the half of the elements. Since the diffusion speed in the upper N type InGaP clad layer 14 is approx. seven times as large as that in the N type GaAs active layer 3, the diffusion in transverse direction having gentle Zn concentration profile in a horizontal direction in the N type InGaP clad layer 14 becomes extremely remarkable, and accordingly the Zn concentration profile in a horizontal direction which largely crosses in oblique manner said GaAs active layer of the Zn diffusion front in the N type GaAs active layer 3 and wherein the average Zn diffusion in the thickness direction of the active layer gently decreases can be obtained.

Inventors

• 👤 Shohei Matsumoto
• 👤 松本　尚平

Bibliographic Details